Reference: Lab Experiments Journal vol-14, No.4, Page-274 Lab Experiments Journal vol-3, No.4, Page-340

JFET characteristics

Experiment(s):

Drain curves & transconductance curves, determination of GMO, IDSS, Vp. Variation of drain, source resistance with gate voltage & variation of transconductance with gate voltage

Specifications

1 . JFET characteristics kit

                    Input: Built-in regulated DC source 0-5 V (1 no.) 
Built-in regulated DC source 0-10 V (1 no.) with fine and  coarse variation knob
Meter: Digital DC voltmeter
Display: Digital DC 3½ digit, LED
Range: 20 V
Resolution: 0.1 V
Current meter: Digital DC milliammeter
Display: Digital DC 3½ digit, LED
Range: 20 mA
Resolution: 0.01 mA
FET: Externally mountable
Rated Input: 220 V/50 Hz or 110 V/60 Hz
Cord/Socket: 3 pin
Power Consumption: <30 W
Cabinet: Acrylic body, aluminium bottom
                  

2 . Patch cords

                    Set of standard 2 mm Patch cords of different lengths with spare cords
                  

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