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Energy gap of semiconductor using silicon diode

Reference: Lab Experiments Journal vol-5, No.1, Page-11

Energy gap of semiconductor using silicon diode

Model: SEG-201

Experiment(s):

Determination of energy gap of a semiconductor sample

Specifications

1. Semiconductor energy gap kit

Voltmeter: 0-20 V
Resolution: 0.01 V
Ammeter: 0-200 mA
Resolution: 0.1 mA
Source: Built-in constant
current source with variable output current setting
Rated Input: 220 V/50 Hz   or 110 V/60 Hz
Power consumption: <40 W
Cabinet: Acrylic body, aluminium bottom

Connectors:
2 mm - 2 mm brass molded patch cord

2. Digital thermometer

Range: 300 °C
Resolution: 0.1 °C

3. Electric kettle & stand

Kettle capacity: 0.5 L
Maximum temperature: 100 °C
Stand: Height adjustable and holds test tube with sample and temperature probe